(100)-oriented CeO2 films on polycrystalline Al2O3 substrates prepared by laser chemical vapor deposition

抄録

CeO2 films were prepared on Al2O3 substrates by laser chemical vapor deposition at different laser power (PL) up to 182 W. The (100)-oriented CeO2 films were prepared at PL = 101 - 167 W (Tdep = 792 - 945 K). The texture coefficient (TC) of (200) reflection had a maximum of 6.7 at PL = 113 W (Tdep = 836 K). The (100)-oriented CeO2 films prepared on Al2O3 substrates consisted of granular grains and showed a columnar structure in cross section. The deposition rate of (100)-oriented CeO2 films showed a maximum of 43 umh-1 at PL = 152 W (Tdep = 912 K).