Abstract
We studied polycrystallization phenomena of naphthyl-substituted diamine derivative (NPD) on three kinds of ITO substrates. While keeping specimens in vacuum desiccator, the growth rate of NPD films fabricated by 2 nm/s was twice that of NPD fabricated by 0.2 nm/s. In addition, the smooth ITO substrate supports a higher growth rate than the rough ITO substrate. The number of nucleations was concluded to depend on the kind of ITO, but not on deposition. The introduction of CuPc between ITO and NPD suppressed polycrystallization. The reduction of molecular motion, i.e. migration, was found to be effective for suppression of polycrystallization.
