Innovative Process and Material for sub-80nm Lithography (M+ Process)

Abstract

We have studied new contact hole shrinkage methods, CASS process and MAGIC process¹. They are simple and cost-effective methods compared to conventional technologies such as RELACS, SAFIER, and CONPEAT. We successfully defined sub-80nm C/H patterns with good profile and broad process margin using modified MAGIC process, so-called M+ (MAGIC-PLUS) process. This process showed less photo-to-etch bias than conventional thermal flow due to relative vertical profile. This process is exactly same process with thermal flow process except treating specific aqueous solution after either soft bake or exposure.