Abstract
In deionaized (DI) water, a removal property of nanoscale bubbles formed on an ArF excimer resist (ArF resist) film is characterized. The fundamental factors of removal property can be explained by means of interaction analysis for a Si substrate. As the interaction analyses on the Si substrate, free energy change, spreading energy, balance model between line tension and buoyancy are discussed. All analyses indicate that the removing of nanoscale bubble from the Si substrate is difficult without any additional load. In order to analyze the fundamental nature of nanoscale bubble, the nanoscale bubble is observed on the Si substrate by using atomic force microscope (AFM). The nanoscale bubble, 50nm diameter and 30nm height, can be observed on the Si substrate. Meanwhile, on the ArF resist film, the nanoscale bubble is characterized based on the above discussion. The sizes of the nanoscale bubble are 240nm diameter and 60nm height. The removal property of nanoscale bubble on the ArF resist film can be explained based on surface energy.
