抄録
EUV lithography is one of the options to be introduced for the 32nm node. Early development of adequate resists and processes is required for timely introduction of EUV technology. In this paper, a screening of EUV resist materials is presented based on EUV interference lithography using transmissive gratings and a synchrotron light source. It was found that most resists are limited in resolution down to 35nm HP. One major issue is to simultaneously achieve high resolution, high sensitivity and low Line edge roughness (LER) required for the 32nm node. The results obtained with interference lithography were compared with exposures performed on a Micro-Exposure Tool (0.3 NA). Lower ultimate resolution, differences in profile but comparable exposure latitudes were seen. Interference lithography is considered to be valuable for early resist testing. Still much work is needed to push EUV resist to the levels necessary for commercialisation.
