抄録
We report here a novel chemically-amplified negative-tone molecular-resist using 3M6C-MBSA-BL, which is a γ-hydroxycarboxylated polyphenol (4,4'-methylenebis[2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)] methyl]phenol (3M6C-MBSA)) for EB and EUV lithographies to be used in hp32 and beyond technology nodes. After selection of photo acid generators (PAGs) and optimization of the concentration of PAG in the resist, we could demonstrate 40-nm line and space patterns resolution by EB exposure. The resist can make negative-tone by means of acid-catalyzed intramolecular-esterification reaction. Also dry-etching durability was confirmed. Small line-edge roughness (LER) values of 4.5 nm (inspection length: L = 620 nm) and 6.2 nm (L = 1800 nm) were achieved using the 3M6C-MBSA-BL resist.
