Abstract
IMEC has started an EUV lithography research program based on ASMLs EUV full field scanner, the Alpha Demo Tool (ADT). The intent of this program is to help improve and establish the necessary mask and resist infrastructure, and achieve learning to prepare for the use of EUV lithography in future production of integrated circuits. The program focuses on three main projects: EUV resists, EUV reticles and assessment of the ADT performance. In this paper, the status and the progress of each of the projects is reviewed. In preparation for a resist process for the ADT, interference lithography has been used to track the progress of resist performance. Good progress in resist performance is illustrated by the ability of some materials to resolve 25nm HP. In its initial phase, the reticle project has concentrated on working with the mask and blank suppliers to assure timely availability of reticles for the ADT. An overview is given of reticle related activities, as well as first results of a defect printability study by simulation. In the ADT assessment project, simulation studies are reported aimed at the development of optical correction for flare and reticle shadowing effects. The impact of flare and shadowing effects are well understood and strategies for flare mitigation and shadowing effect correction are proposed.
