2008 Volume 21 Issue 6 Pages 777-784
Most recent topics of EUVL are that AMD demonstrated first functional device using ADT in Albany to integrate SRAM cells in the full chip cell of Typhoon, and IMEC demonstrated functional 0.186 μm2 32 nm node SRAM cells with extreme ultraviolet lithography (EUVL) on the contact-hole level. The recent topics and prospect for extreme ultraviolet (EUV) lithographic technology are described of the exposure tools, EUV source, mask inspection, and resist development. EUVL source technology has been advanced in these three years to increase the power and to extend the beam stability. For the mask, defect inspection system development was advanced by a several institute to detect the defect to find the threshold condition of printable and non-printable. As for a resist, the resolution and sensitivity were refined to become close to satisfy the required specification for 32-nm node. However LWR has not been satisfied the specification yet. Furthermore, since EUVL will be pushed for 22-nm node and it should be use until 11 nm node in the ITRS, EUVL technology has to be ready around 2012 to transfer to the pilot line. For 22-nm node, the resist has not been satisfied yet. Thus it needs large steps to develop the resist material and process for 22-nm node and below down to 16-nm node in EUVL.
