EUV Lithography Development and Research Challenges for the 22 nm Half-pitch

Abstract

Extreme ultraviolet lithography (EUVL) is the main contender for high volume semiconductor lithography patterning at the 22 nm half-pitch node. The most aggressive semiconductor manufacturers target pilot line introduction of this technology in 2011/12 and high volume manufacturing insertion in 2013/14. This requires the infrastructure of the supply chain supporting the technology-light sources, masks, and resists-to be ready once pilot line exposure tools are delivered to customers. Although improvements are still needed, the current status of infrastructure technology readiness suggests that it will support the targeted pilot line insertion date. However, to support high volume manufacturing introduction, more significant developments are still required to address technical and business challenges. These include demonstrating reliable high power EUV sources and enabling a commercial mask tool infrastructure that can support sub-20 nm defect inspection and review requirements.