Design Considerations for EUV Resist Materials

Abstract

This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound PAG approach achieves 25nm half pitch resolution with an LWR of 3.8nm and a photospeed of 10mJ. The Polymeric PAG approach also possesses higher exposure latitude vs a PAG blend resist. Although still maturing, it is felt that polymer-bound PAG-based resists will become quite useful at the 22nm node and below.