Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Important Challenge for Optical Lithography Extension utilizing Double Patterning Process
Hidetami YaegashiKenichi OyamaKazuo YabeShoichi YamauchiArisa HaraSakuraoka Natori
Author information
JOURNAL FREE ACCESS

2011 Volume 24 Issue 5 Pages 491-495

Details
Abstract

Lithographic scaling has been driven by improvements in wavelength and numerical aperture historically. In the semiconductor industry, the H2O base 192 immersion technique has still been main exposure tool combined with various low-k1 techniques, such like off-axis illumination, phase-shift mask and so on. The focus is now on double patterning techniques (DPT) as a means to circumvent the limitations of Rayleigh′s definition. Actually, self-aligned spacer double patterning (SADP) has already been employed in high volume manufacturing of NAND flash memory devices. This paper introduces demonstration results focused on the extendibility of double patterning techniques for downward scaling and various device layouts utilizing SADP (Self-aligned Double patterning) mainly.

Information related to the author
© 2011 The Society of Photopolymer Science and Technology (SPST)
Previous article Next article
feedback
Top