Comparison of Resist Outgassing Characterization between High Power EUV and EB

Abstract

For high volume manufacturing (HVM) using extreme ultraviolet (EUV) lithography, a practical resist outgassing qualification system is required. Witness sample (WS) testing systems using electron beam (EB) or low power EUV have been proposed as candidate methods, however some issues remain on how these alternative light sources, in comparison to future high power EUV in exposure tools for HVM, will affect actual resist chemical reactions and ultimately resist outgassing. In this paper, we have investigated outgassing from resist induced optics contamination by utilizing two types of WS test systems of high power EUV and EB. A correlation between these light sources is discussed, especially focusing on the resulting chemical phenomena depending on resist material properties.