2012 Volume 25 Issue 5 Pages 641-646
This paper reports on our development of low diffusion EUV resists based on polymer-bound PAG (PBP) technology. With our low diffusion resist, a wide process window for 30-nm hp of 280nm DOF over a 10% exposure range is achieved on the CNSE based Alpha Demo Tool (ADT) fullfield scanner. Line width roughness of 3.1nm is also achieved. Excellent resist profiles can be achieved on organic ULs or Si hardmask materials. This resist also shows only 1.1 nm carbon growth on witness plate mirrors for cleanables, and no reflectivity loss after mirror cleaning, making it a promising candidate for use on all NXE tools. We also have shown good pattern transfer for a Si HM stack using this resist. Finally, we report 17-nm hp resolution at a dose of 14.5mJ for a higher absorption resist.
