抄録
The dissolution characteristics of EUV resist patterns as they are formed during the development process were analyzed using the HS-AFM. This in situ dissolution analysis method has been significantly optimized and can now be utilized for the analysis of 32 nm hp L/S pattern developed with a standard concentration (0.26 N) of the tetramethyl ammonium hydroxide developer solution. Further investigations have shown that this method is presently limited to hp L/S patterns around 32 nm hp L/S. This was mainly attributed to the comparatively thick radius of curvature of presently available cantilevers. Furthermore, the results obtained here have shown that resists of good pattern LWR exhibit smooth patterns even during dissolution. On the other hand, resists of comparatively large LWR also show signs of such roughness even during the dissolution process. These results show the possibility of defining the formation mechanism of LWR during the development process.
