Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism
Marie KryaskMarkos TrikeriotisChristine OuyangSovik ChakrabartyEmmanuel P. GiannelisChristopher K. Ober
Author information

2013 Volume 26 Issue 5 Pages 659-664


Hybrid nanoparticle photoresists and their patterning using DUV, EUV, 193 nm lithography and e-beam lithography has been investigated and reported earlier. The nanoparticles have demonstrated very high EUV sensitivity and significant etch resistance compared to other standard photoresists. The current study aims at investigating and establishing the underlying mechanism for dual tone patterning of these nanoparticle photoresist systems. Infrared spectroscopy and UV absorbance studies supported by mass loss and dissolution studies support the current model.

Content from these authors
© 2013 The Society of Photopolymer Science and Technology (SPST)
Previous article Next article