Abstract
EUV lithography is one of the promising technologies for manufacturing devices at 16 nm half-pitch node and below. EUV resists are required to improve the resolution, line width roughness (LWR), and sensitivity. However it is generally thought that the lithographic performance is determined by the trade-off relationship among these factors. Moreover, resist outgassing is another issue with EUV resists, as the outgassing of resists during EUV exposure can cause carbon contamination on EUV mirrors, thereby degrading its reflectivity. This paper outlines the recent progresses in EUV resist technology at the EUVL Infrastructure Development Center.
