Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
EUV Resist Chemical Analysis by Soft X-ray Absorption Spectroscopy for High Sensitivity Achievement
Kazuya EmuraTakeo WatanabeMasato YamaguchiHirohito TaninoTsubasa FukuiDaiju ShionoYuichi HaruyamaYasuji MuramatsuKatsumi OhmoriKazufumi SatoTetsuo HaradaHiroo Kinoshita
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2014 Volume 27 Issue 5 Pages 631-638

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Abstract
Simultaneous achievement of high sensitivity and low line edge roughness (LWR) is necessary in EUV resist. The chemical reaction analysis of EUV (Extreme Ultraviolet) chemical amplified (CA) resist and acid diffusion length evaluation was carried out. In order to achieve low LWR of the CA resist, the large chemical structure of the anion of photoacid generator (PAG) is required for shortening the acid diffusion length. On the other hand, in order to increase the sensitivity, on the basis of the chemical reaction analysis using the soft x-ray absorption spectroscopy, the decomposition reaction of the large chemical structure of the PAG anion should be taken in account in addition of ionization reaction. However, if the decomposition reaction occur, the acid diffusion length will become shorter than that as expected. It is found that the Imidate-type of anion of PAG has high sensitivity and short diffusion length. The chemical reaction analysis by the soft x-ray absorption spectroscopy using the synchrotron radiation with the combination analysis of the acid diffusion are useful method for the mitigation of high sensitivity and low LWR.
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© 2014 The Society of Photopolymer Science and Technology (SPST)
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