Investigation of Low Temperature Process of Solution Processed Oxide Semiconductor as a Thin Film Transistor

Hea Jeong Cheong; Shintaro Ogura; Manabu Yoshida; Hirobumi Ushijima; Nobuko Fukuda; Sei Uemura

doi:10.2494/photopolymer.28.353

Hea Jeong Cheong, Shintaro Ogura, Manabu Yoshida, Hirobumi Ushijima, Nobuko Fukuda, Sei Uemura

著者情報

キーワード: Indium gallium zinc oxide (IGZO) precursor solution, Microwave annealing, Photo irradiation

ジャーナルフリー

2015 年 28 巻 3 号 p. 353-355

DOI https://doi.org/10.2494/photopolymer.28.353

詳細

抄録

A solution-processed a-IGZO TFT was fabricated at 300 °C for 6 min using MW and photoirradiation. Photoirradiation enhanced the on current and the on/off current ratio. The improvement in the TFT performance was attributed to the removal of the organic residue in the IGZO film, leading to the decrease in the charge trap.

責任著者(Corresponding author)

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