2016 Volume 29 Issue 3 Pages 391-394
As there is an increasing demand for advanced electronic devices, high-density and fine circuit is required more than ever before. However, it is difficult to fabricate fine Cu wiring below 5µm on an organic substrate using current processes such as semi-additive process (SAP). In this paper, the trench wiring formation process with photosensitive organic materials was studied to make fine Cu wiring below 5µm. Photosensitive organic materials were mainly used as protection and insulation layers of very large scale integrated circuit because they simplify via formation processing by photolithography. We newly developed film-type photosensitive insulation material for high-density interposer. The photosensitive insulation film (PIF) showed high resolution (L/S = 3/3µm for 10µm-thick film) and suitability to novel trench Cu wiring formation process. Cu embedded wiring (L/S = 3/3µm for 10µm-thick Cu) was enabled by trench Cu wiring formation process.
