Challenges to Overcome Trade-off between High Resolution and High Sensitivity in EUV Lithography

Abstract

EUV lithography is one of the most promising candidate technologies for high volume manufacturing(HVM) of 7nm node beyond. To apply EUV lithography to HVM, high resolution and fast sensitivity with low roughness are required. To improve sensitivity, we developed novel PAG that includes electron withdrawing group (EWG). The PAG showed high acid generation efficiency from our experimental results. Increasing proton source unit in resist matrix also produces high acid generation efficiency. By using the novel PAG and increasing proton source unit ratio in resist matrix, we developed novel resists that produces high resolution patterns with reasonable sensitivity.