抄録
Multiphysics simulations are performed to analyze the pattern formation process in electron beam lithography (EBL). The simulations consist of a Monte Carlo simulation of electron scattering and molecular dynamics simulation. Some issues encountered in EBL such as electron irradiation defects, resist heating effects and charging effects on pattern formation are studied using the simulations. The simulations revealed shrinkage of the electron-exposed resist surface, the change of pattern edge caused by rising temperature and the shift of electron beam landing position induced by a charging effect. Atomic-scale information on pattern structure and stress distribution in EBL are also discussed.
