Novel Photoresist using Photodeprotectable N-Alkoxybenzyl Aromatic Polyamide

Abstract

Photodeprotection of N-octyloxybenzyl aromatic polyamide film containing photo acid generator (PAG) was investigated. The photodeprotection was proceeded well under UV irradiation (5 J/cm²), followed by heating at 130 °C for 15 min in the presence of 25 wt% of PAG. Line pattern of 30 to 20 μm on Si wafer was obtained from the photosensitive film after dipping into acetone. It turned out that N-alkoxybenzyl aromatic polyamides serve as a new photosensitive material in the presence of PAG.