Characterization of Chemically Amplified Resists with "Acid Amplifier" for 193nm Lithography

抄録

We analyzed the characteristics of acid amplified positive resists designed for 193nm lithography. The acid amplified resists are composed of an acid generator, a partially protected alicyclic polymers and an acid amplifier which is designed to produce acid during post-exposure baking. We first investigated the lithographic performance of acid amplified resists. Then we have simulated acid amplification reactions and calculated process window improvement. The simulation analysis clarified that acid amplification slightly contributes to increasing the process margin.