Chemically Amplified Silicon Containing Resist for ArF Excimer Laser Lithography
1997 年 10 巻 4 号 p. 585-588
詳細
1997 年 10 巻 4 号 p. 585-588
A new positive chemically amplified resist which consists of novel methacrylate terpolymer with bis(trimethylsilyl)isopropyl group and a photoacid generator has been developed for ArF excimer laser photoresists. The polymer structure and properties was evaluated by 1H-NMR, UV, FT-JR. DSC, TGA and GPC. This new terpolymer demonstrates good thermal stability up to 135°C, good dry-etching resistance, high transparency (75%) for a ArF excimer laser exposure. Preliminary line and space patterns were obtained using an ArF excimer laser exposure system.
