chemically Amplified Si-contained Resist Using Silsesquoxane for ArF Lithography (CASUAL) and its Application to Bi-Layer Resist Process

Taku Morisawa; Nobuyuki Matsuzawa; Shigeyasu Mori; Yuko Kaimoto; Masayuki Endo; Koichi Kuhara; Takeshi Ohfuji; Masaru Sasago

doi:10.2494/photopolymer.10.589

Taku Morisawa, Nobuyuki Matsuzawa, Shigeyasu Mori, Yuko Kaimoto, Masayuki Endo, Koichi Kuhara, Takeshi Ohfuji, Masaru Sasago

著者情報

キーワード: ArF lithography, bi-layer resist process, chemically amplified resist, silsesquoxane, dry development

ジャーナルフリー

1997 年 10 巻 4 号 p. 589-594

DOI https://doi.org/10.2494/photopolymer.10.589

詳細

抄録

We have proposed a chemically amplified Si containing resist used silsesquoxane polymer for ArF Lithography (CASUAL). ACASUAL-type polymer of carbon-acid-cyclohexl-silsesgouxane with photo-acid-generators acted as positive-tone resists under ArF exposure; the resist was highly transparent (<50% at 350-nm-thick resist), highly sensitive (<7mJ/cm2) and showed excellent resolution (sub 02μm) for 193-nm exposure. Well-defined sub-02μm BLR patterns were delineated successfully.

責任著者(Corresponding author)

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