ArF Surface Modification Resist Process using Polymer System with Polarity Change Unit

抄録

Surface modification resist (SMR) process, which gives negative-tone image owing to the polysiloxane formation on exposed resist surface using chemical vapor deposition (CVD), was studied for ArF excimer laser lithography. The selective polysiloxane formation is based on the hyckolysis of alkoxysilane and subsequent condensation in the presence of a photo-induced acid catalyst and water. The selectivity of water sorption in the exposed region determines the selectivity in surface modification. We proposed a polymer system with a polarity change unit for improving an affinity for water. This polymer improved the selectivity in the surface modification as compared with a polymer without the polarity change unit. 0.13μm pattern fabrication was achieved by using this polymer for ArF lithography. Furthermore, the patterned polysiloxane layers below 0.20μm feature were stably formed in the delay time of several days from the exposure to the CVD treatment.