Bilayer resists for DUV lithography

Abstract

The bilayer process has been studied to extend the resolution limit down to 0.1μm or smaller features using 193nm wavelength light source. Two concepts are widely adopted for designing bilayer resist: (a)introduce silicon function group into top layer(photosensitive layer) and (b) reduce the aspect ratio of the top layer to enhance the resolution. This study investigated the lithography performerance of silicon containing polymers. The 0.15μm L/S pattern was resolved.