Polymers Containing Etch Resistant Ether Protecting Groups for DUV Lithography

Abstract

In this paper, we have shown the importance of acid labile ether protecting groups in the design of high performance 248nm resists with significantly improved etch resistance. Using α-methylbenzyl ether protecting group, we have synthesized and studied partially protected poly(hydroxystyrene) derivative, PHS-MBE. Studies clearly pointed out that methylbenzyl ether protecting group is thermally stable and undergoes acid catalyzed deprotection leading to preferential rearranged products due to electrophilic ring substitution. Such a rearrangement is shown to provide a unique mechanism to reduce/eliminate resist shrinkage and improve lithographic performance and RIE stability.