A New 193nm Single Layer Resist Based on Cycloolefin Maleic Anhydride Polymers

Abstract

A series of new cycloaliphatic olefin monomers protected by alicyclic hydrocarbon groups were synthesized. New cycloolefin-maleic anhydride (COMA) polymers were also designed and prepared using the new monomers for 193nm resist applications. These polymer were synthesized by free radical polymerization method, utilizing azobisisobutyronitrile (AIBN). The new COMA polymer had good transparency at 193nm and had an etch rate in CF₄ mixture plasma of approximate 1.0 times that of KrF resists. Using ArF exposure tools (NA=0.6, σ=0.7), 130nm L/S patterns were resolved. When exposed with off-axis illumination, 100nm L/S patterns were resolved.