抄録
Three different silylation chemistries and processes are presented. The highly sensitive epoxy resist (EPR) can be silylated with chlorosilanes while the hydroxyl functionalized SAL601 and AZPN114 are silylated with the standard silyl amine chemistry (positive tone, single layer, top surface imaging (TSI), liquid or gas phase silylation processes). The process developed for epoxy functionalized resists is applied effectively to 193 nm and high energy (50KeV) electron-beam lithography. Process issues are discussed. In addition, a novel bilayer silylation process for an experimental 157nm chemically amplified positive (CAP) resist is presented in which the silylation reaction takes place after the wet development following the standard silyl amine chemistry. Alternatively, the acrylate moieties can be silylated with diamino siloxanes in alcoholic solutions.
