Evaluation of the Outgassing from Resists at the EUV Wavelength

Abstract

One of the important issues in EUVL is the outgassing problem because the contamination caused by the resist outgassing decreases the reflectivity of the reflective mask and the imaging optics. In this report, we evaluated the resist and resin ougassing at EUV wavelength by the quadrupole mass spectrometer (QMS) and the adhesion to surface of Mo/Si substrate or Si substrate from outgassing by the time-of-flight secondary ion mass spectrometry (TOF-SIMS). The samples were four typical kinds of polymers.
As a result of QMS-measurement, it was found that the mainly outgassing species detected are carbon oxide (28 amu) and hydrocarbon.
As a result of TOF-SIMS measurement, Si (28) due to the substrate were mainly detected in spite of resist or resin sample. TOF-SIMS data have not interrelation to QMS data for these experiments. So, it was found that outgassing materials detected by QMS are little on the surface of the Mo/Si or Si substrate.