Abstract
Alkylated Poly(4-hydroxystyrene) copolymers have been prepared and evaluated for use in deep-uv lithography. These materials have been modified to lower the dissolution rates of poly(4-hydroxystyrene) while maintaining the other desirable properties such as optical absorbance, glass transition temperature, and etch resistance. Lower dissolution rates make these polymers more attractive for application in dissolution inhibition resist schemes. The application of these materials to resists employing diazo compound inhibitors and three component resists using acid photogenerators and acid-sensitive dissolution inhibitors is described.
