PLASMA POLYMERIZATION OF ORGANOSILICON COMPOUNDS BY THE SELF-BIAS METHOD

Abstract

Organosilicon compounds were deposited in an RF cathode coupled plasma using Tetramethoxy silane. The films were deposited on silicon and glass substrates in negative self-bias voltages over the range of -80V to -580V. The deposited films were highly crosslinked and optically highly transparent between optical wavelengths from 420nm to 1000nm when oxygen was infused with the monomer.