Abstract
Crystalline thin films of polytetrafluoroethylene were deposited on Si (100) wafers by F2 laser (157nm) ablation. X-ray photoemission spectra indicated that the composition of deposited films was similar to the source material. The surface morphology of films deposited at room temperature contained numerous fibrous structures in size of 100-400nm, but they were smoothed out at elevated wafer temperature of -370K. The refractive index was -1.35 at 633nm. Ionized fragments in the ablation plume were measured by a Faraday cup assembly, but their effect on the deposited films was not observed at the present ionization ratio.
