HIGHLY SENSITIVE ELECTRON-BEAM NEGATIVE RESISTS UTILIZING PHENYLCARBINOL AS DISSOLUTION-INHIBITOR PRECURSOR

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Chemically amplified negative resists made by utilizing the polarity-change reaction of phenylcarbinol were investigated for electron beam lithography. The resist composed of 1, 3-bis(α-hydroxyisopropyl)benzene (Diol-1), m/p-cresol novolak resin, and diphenyliodonium trifluoromethanesulfonate (DITf) showed the best lithographic performance in terms of sensitivity and contrast among the resists using phenylcarbinol. Fine 0.25-μm line-and-space patterns were formed by using this Diol-1 resist with a dose of 3.6 μC/cm2 in conjunction with a 50-kV electron beam exposure system.