1996 年 9 巻 4 号 p. 677-684
The effects of base additives in chemically amplified positive electron-beam (EB) resist are discussed. The amine additives can improve the resolution of the resist by preventing diffusion of acids outside the exposed area. As a result, 0.1-μm L/S patterns can be obtained, successfully. Additionally, the amine additives can also improve the environmental stability. However, it was demonstrated that the influence on environmental stability differs depending on the chemical structure of amine. The phenomenon is attributable to the process of a proton-base reaction which is investigated by semi-empirical molecular orbital calculation.