Novel Polymeric Resists Based on Vinyl Ether Functionality

Photochemistry and Evaluation as A Lithographic Resist for Synchrotron X-ray and Deep UV

抄録

A new positive resist composed of a bifunctional vinyl ether monomer as crosslink-er and a photoacid generator and a protic base resin was investigated. This resist materials utilizes the unique reaction of vinyl ether monomer. The vinyl ether monomer forms crosslinks of base polymer by prebaking and the crosslinks are decoupled by acidolytic reaction via generation of acids upon exposure. The lithographic properties for x-ray lithography such as effects of crosslinker concentration and process conditions were evaluated. The resist has a high sensitivity of 35mJ/cm2 and a high gamma value of of 10. A good profile for 0.2μm lines and spaces patterns was obtained. Furthermore, it was found that the resist material has high thermal resistance up to 180°C against both pattern deformation and resist thickness loss.