Development of Cleaning Method Using High-Speed Shear Flow of Ultrapure Water
– Cleaning of Cu Contamination on Si Wafer Surface –

Abstract

We proposed a new cleaning method for silicon wafer using high–speed shear flow of ultrapure water along the surface in order to develop an eco–friendly and low–cost cleaning method without using any chemical solutions, and cleaning experiments for the compulsorily polluted silicon wafer with copper were conducted.
As a result, under the experimental conditions of 50m/s average flow velocity and 400 sec cleaning time, the density of copper atom on the silicon surface decreased from 5×10¹³atoms/cm² to the level of 10⁹atoms/cm² which exceeds the performance of ordinary cleaning methods using chemical solutions.