Abstract
Spin–on glass (SOG) was reported that can do a 3–dimensional (3D) electron beam exposure. But the 3D transfer processing characteristic is unknown. Then, in this study, we reported the shape of the transfer pattern on Si by using the SOG mask with argon ion beam etching. As a result, it has been understood that the extension of shape is comparatively suppressed when the accelerating voltage is high. However, the processing selection ratio at this time becomes small. The other side, as the accelerating voltage is low, the extension of shape is comparatively widen but the processing selection ratio becomes big.
