Proceedings of JSPE Semestrial Meeting
2011 JSPE Autumn Conference
Session ID : F68
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The development of polishing method for the silicon carbide substrate using controlled slurry under AC electric field -2nd report-
*Takayuki KusumiYasuhiro SatoYoichi AkagamiNoritsugu Umehara
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Abstract
Authors have been developed a novel polishing method using functional fluids which are dispersed abrasives with silicone oil. This fluid shows active reciprocate motion between electrodes under AC electric field at very low frequency. In order to obtain the excellent silicon carbide substrate for next generation power semiconductor, we tried polishing test under AC electric field using the slurry that dispersed the silicon carbide abrasives with the silicon oil. We have confirmed the improved polishing rate in proportion to electric field strength, and the change for slurry characteristics by the solvent viscosity.
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© 2011 The Japan Society for Precision Engineering
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