The development of polishing method for the silicon carbide substrate using controlled slurry under AC electric field

Abstract

Authors have been developed a novel polishing method using functional fluids which are dispersed abrasives with silicone oil. This fluid shows active reciprocate motion between electrodes under AC electric field at very low frequency. In order to obtain the excellent silicon carbide substrate for next generation power semiconductor, we have tried polishing test under AC electric field using the slurry that dispersed the silicon carbide abrasives with the silicon oil. We have confirmed the increased polishing rate in proportion to electric field strength.