抄録
SiO2 films have been prepared by oxidizing n-type Si(001) wafers using atmospheric-pressure (AP) 0.5.5%O2 /He plasma at 300.450°C. Structure, chemical composition, thickness and refractive index of the oxide films are investigated by infrared absorption spectroscopy, X-ray photoelectron spectroscopy and ellipsometry, respectively. Moreover, the electrical property of SiO2/Si interface is analyzed by capacitance.voltage measurement of Al/SiO2/Si capacitor. The results show that the low-temperature AP plasma oxidation process is capable of producing high-quality SiO2 films applicable for surface passivation of n-type Si surfaces.
