抄録
We are developing a surface passivation process of Si by atmospheric-pressure plasma oxidation at low temperatures. To realize effective surface passivation, it is important to increase the fixed charge density (Qf) in the film as well as to reduce the interface state density (Dit). In this work, we have investigated the effects of N addition into the SiO2 film on Qf and Dit. Electrical characterization results have shown that the addition of N increases both Qf and Dit. Therefore, it is important to optimize the formation and annealing conditions to obtain effective surface passivation films in the atmospheric-pressure plasma oxidation process.
