Si₃N₄と金属接合部における反応層およびCu富化層の形成現象

耐熱性ファインセラミックスの接合に関する研究(第7報)

抄録

Bonding of Si₃N₄ to W using Cu-5%Cr, Cu-1%Nb, Cu-3%V, Cu-5%Ti and Cu-10%Zr insert metals was conducted in a vacuum chamber. Thickness of the reaction layer formed at the interface between Si₃N₄ and insert layers was increased with increasing bonding temperature and holding time. SEM observation revealed that reaction layer grew toward the both sides of bonding interface. Growth of reaction layer toward the Cu enriched layer was attributed to the reaction between N and Cr, Nb, V, Ti or Zr, and that toward Si₃N₄ was attributed to the solid state reaction between Si₃N₄ and Cr, Nb, V, Ti or Zr in the reaction layer. Formation of Cu enriched layer was explained as a consequence of decrease in the contents of Cr, Nb, V, Ti and Zr in the melted insert metal by the reaction with Si₃N₄.