抄録
Er-doped Al2O3 films and Er-doped SiOx films have been synthesized by using ion beam assisted deposition (IBAD) methods. The microstructures of films and their annealing behaviors have been studied by using transmission electron microscopy (TEM) and x-ray diffraction (XRD). According to the results of TEM and XRD, Er-doped Al2O3 films are dominantly amorphous when deposited below 500℃. The films became polycrystalline γ-Al2O3 after annealing at 800℃ and 1000℃ for 6 hours and unique α-Al2O3 after annealing at 1200℃ for 2 hours. The refractive index of Al2O3 films is in the range of 1.65 to 1.70 at the substrate temperature of 70-500℃. High substrate temperature can improve the distribution of refractive index and optical loss of the Al2O3 films. Er-doped SiOx films as deposited below 500℃ are amorphous and change into nano-crystalline after 800℃ annealing and polycrystalline after 1100℃ annealing. The photoluminescence (PL) of Er-doped SiOx can be detected after the films annealed at 700℃ and PL intensity increases with the increase of annealing temperature in the range of 700℃ to 1100℃.
