硫酸銅めっき厚膜における残留応力の増加要因とその抑制

抄録

This study investigated the effect of current density and concentration of bis(3-sulfopropyl)disulfidedisodium(SPS)upon the residual stress of copper sulfate plating. The residual stress increased because of increasing lattice strain with current density. Moreover, the lattice strain increased with hydrogen entrapped in the grain boundary of Cu films. Results clarified that residual stress was suppressed concomitantly with increased SPS concentration. During self-annealing of small grains, the residual stress is reduced by electrodeposition of a high concentration of SPS.