抄録
Metal (Cr, Ti, Si) thin films were prepared by evaporation and ion plating, the influence of argon gas pressure, deposition rate and substrate bias voltage on their crystal orientation and morphology was investigated. Although the crystal structures of films differed, the changes in their preferred orientation and morphology showed a similar tendency. Films deposited at low argon gas pressure exhibited low surface energy face orientation and a columnar structure. The relative intensity of high surface energy face increased with increases in argon gas pressure. The diffraction peaks of the films became weak and broadened as argon gas pressure became excessive. Film morphology changed from columnar to granular as argon gas pressure increased. It was concluded that metal films exhibiting a fine grannular structure can be obtained by the PVD method at high argon gas pressures. The orientation and morphology of the films were also influenced by deposition rate and substrate bias voltage.
The change in film orientation was explained by an adsorption model.
