ダイヤモンド成長過程を電気的にその場測定する方法

抄録

A distinct electrical resistance change between a substrate and a torch has been found, that signals the nucleation and growth of diamond under the conditions of reverse bias in which the substrate is held at a negative potential to the torch. It appears that even the quality of diamond films and their deposition rates can be diagnosed using the profile of this resistance change. The results have been confirmed for a variety of substrate materials (Mo, Si, and Cu) over a wide range of synthesis conditions. A tentative model is proposed to explain the observed resistance change and interpret the above-mentioned phenomena. No such electrical resistance change has been observed under forward bias.