抄録
Studies were made on the growth of nitride layers produced by ion nitriding of aluminum at pressures of 1.4∼3.8Torr and temperatures of 400∼550°C. It was found that the formation of nitride layers and the sputtering of the formed layers by nitrogen ion bombardment proceeded simultaneously. This sputtering effect was more marked at lower nitrogen gas pressures and temperatures, and therefore the nitrogen gas pressure and nitriding temperature influenced the growth rate and morphology of the nitride layers. The growth rate increased at higher temperatures and lower nitrogen gas pressures. The reaction kinetics on the growth of the layers was represented by a linear relationship.
