抄録
Mild steel substrates were treated by C-ion or N-ion implantation, and by dynamic ion mixing in which such implantations were carried out simultaneously with Ti-deposition. Some substrates were implanted with B-ions before treatments to ascertain the location of the original substrate surface. Compositional depth profiles of the surface regions were obtained by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and X-ray photoelectron spectroscopy (XPS), and their structures were determined by thin-film X-ray diffractometry. C-ion or N-ion implantation cannot form a μm-thick C-Fe or N-Fe mixed layer even if the ion dose is increased to the order of 1018ions/cm2. With simultaneous low-rate Ti-deposition, however, the same ion implantation causes an outward transport of substrate Fe atoms, resulting in the formation of a 1-15μm-thick C-Fe or N-Fe mixed layer at around 100°C. It is thought that some of the Fe atoms sputtered by the ion implantation are trapped by the depositing Ti atoms, causing the outward transport of the substrate Fe atoms.
